From ACT-ONE to Miranda, a Translation Experiment

It is now almost universally acknowledged that the data language ACT-ONE associated with the formal description technique LOTOS is inappropriate for the purpose of OSI formal description. In response to this the LOTOS restandardisation activity plans to replace ACT-ONE with a functional language. Thus, compatibility between ACT-ONE and the replacement data language becomes an issue. In response to this, we present an experimental investigation of backward compatibility between ACT-ONE and the new LOTOS data language. Specifically, we investigate translating ACT-ONE data types into the functional language Miranda. Miranda has been chosen as it is a widely used functional programming language and it is close in form to the anticipated new data language. This work serves as a ``verification of concept'' for translating ACT-ONE to the E-LOTOS data language. It identifies the bounds on embedding ACT-ONE in a functional data language. In particular, it indicates what can be translated and what cannot be translated. In addition, the paper reveals pertinent issues which can inform the E-LOTOS work. For example, which constructs are needed in E-LOTOS in order to support the class of data type specifications typically made in the LOTOS setting? We conclude with a number of specific recommendations for the E-LOTOS data language

630-mV open circuit voltage, 12% efficient n-Si liquid junction

We report the first experimental observation of a semiconductor/liquid junction whose open circuit voltage Voc is controlled by bulk diffusion/recombination processes. Variation in temperature, minority-carrier diffusion length, and/or in majority-carrier concentration produces changes in the Voc of the n-Si/CH3OH interface in accord with bulk recombination/diffusion theory. Under AM2 irradiation conditions, the extrapolated intercept at 0 K of Voc vs T plots yields activation energies for the dominant recombination process of 1.1–1.2 eV, in accord with the 1.12-eV band gap of Si. A crucial factor in achieving optimum performance of the n-Si/CH3OH interface is assigned to photoelectrochemical oxide formation, which passivates surface recombination sites at the n-Si/CH3OH interface and minimizes deleterious effects of pinning of the Fermi level at the Si/CH3OH junction. Controlled Si oxide growth, combined with optimization of bulk crystal parameters in accord with diffusion theory, is found to yield improved photoelectrode output parameters, with 12.0±1.5% AM2 efficiencies and AM1 Voc values of 632–640 mV for 0.2-Ω cm Si materials